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Waveguide-integrated near-infrared detector with self-assembled metal silicide nanoparticles embedded in a silicon p-n junction
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic of the Si waveguide-integrated photodetector based on the embedded metal silicide nanoparticles, (b) cross-sectional view of the device, (c) energy band diagram of the Si p-n junction with embedded metal NPs under reverse bias, and (d) simplified escape cone model for Schootky emission shown in momentum space, the shaded cone with angle of Ω represents a thick silicide film on Si, whereas the shaded spherical ring represents a very small silicide NP surrounded by Si.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Schematics of Si waveguide with a 5-nm-thick NiSi placed on the top, (b) Si waveguide with a 5-nm-thick NiSi embedded in the middle, (c) Si waveguide with NiSi NPs embedded in the middle, (d) total power absorption in the above 3 kinds of 1-μm-long waveguides versus wavelength for TE light, and (e) total power absorption for TM light. In the case of NiSi film on the top of waveguide, the TM light can excite a surface plasmon polariton (SPP) mode, thus being absorbed more effectively than the TE light.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Top view of the fabricated device, (b) STEM image, and (c) enlarged XTEM image of the final polySi/Ni-silicide/c-Si structure.

Image of FIG. 4.
FIG. 4.

(Color online) (a) I-V characteristic of the fabricated PD at room temperature, inset is the photo- and dark-currents of the PD, the light power arrived the detector is ∼0.32 mW, and (b) responsivity at 5-V reverse bias versus wavelength for quasi-TE and quasi-TM lights.

Image of FIG. 5.
FIG. 5.

(Color online) Temporal response of the fabricated PD under different reverse biases illuminated by a 1550-nm pulsed laser, inset is the Fourier transform, from which the 3-dB bandwidth is estimated to ∼6 GHz.


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Scitation: Waveguide-integrated near-infrared detector with self-assembled metal silicide nanoparticles embedded in a silicon p-n junction