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(Color online) (a) Schematic of the EDMR setup with an X-band TE102 microwave cavity. The Zeeman (B 0), microwave magnetic (B 1), and electric (E 1) fields are also shown. (b) Circuit diagram representation of the high frequency voltage fluctuations induced on the MOSFET in the EDMR setup, with non-ideal metal-silicon contacts represented by diodes. The shunt capacitor (Cshunt , dashed lines) can suppress the high frequency voltage fluctuations and resulting rectification effects. (c) Schematic of the implementation of shunt capacitors with our MOSFETs.
(Color online) I-V characteristics of MOSFETs measured at T = 4.8 K with microwave power turned off (0 mW, blue solid traces) and set to the maximum (200 mW, red dashed traces): (a) device without a microwave shunt and (b) device with the overlaying microwave shunt. The gate voltages were adjusted from 300 mV to 750 mV in 50 mV increments from bottom to top in both plots. All measurements were performed with θ = 90°
(Color online) EDMR spectra of MOSFETs without (upper red trace) and with (lower blue trace) a capacitive shunt, offset for clarity. Both spectra were recorded with 200 mW microwave power. Magnetic field modulation at 1.56 kHz and modulation amplitude of 0.4 mT were used.
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