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Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures
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10.1063/1.3684625
/content/aip/journal/apl/100/6/10.1063/1.3684625
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/6/10.1063/1.3684625
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Cross section TEM micrographs of the NiO film grown onto AlGaN/GaN heterostructure: (a) low magnification bright field contrast; (b) the NiO/AlGaN interfacial region acquired in the high resolution mode. The fast Fourier transform is shown in the inset.

Image of FIG. 2.
FIG. 2.

(Color online) (a) C-V characteristics of the NiO/AlGaN/GaN MIS diode and of the reference AlGaN/GaN Schottky diode. (b) 2DEG concentration profiles N as a function of the depth d.

Image of FIG. 3.
FIG. 3.

(Color online) Current density–voltage (J-V) forward and reverse characteristics of the NiO/AlGaN/GaN MIS diode and of the reference AlGaN/GaN Schottky diode.

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/content/aip/journal/apl/100/6/10.1063/1.3684625
2012-02-10
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/6/10.1063/1.3684625
10.1063/1.3684625
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