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Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization
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10.1063/1.3685483
/content/aip/journal/apl/100/6/10.1063/1.3685483
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/6/10.1063/1.3685483
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) A schematic of charge distribution of a graded channel in AlGaN/GaN HEMT.

Image of FIG. 2.
FIG. 2.

(Color online) Epitaxial structure of the (a) graded channel HEMT and (b) conventional HEMT.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Energy band diagram of the graded channel HEMT. (b) Simulated electron density profiles and the conduction band profiles in quantum well. (c) Two sub-bands occupied and the profile of the wave-functions. (d) Measured C-V profiles of graded channel HEMT and conventional HEMT.

Image of FIG. 4.
FIG. 4.

DC I-V characteristics of (a) the graded channel HEMT and (b) the conventional HEMT after gate recess.

Image of FIG. 5.
FIG. 5.

(Color online) (a) gm vs. Vgs and (b) gmi vs. Vgc for the graded channel HEMT and the conventional HEMT at Vds = 10 V.

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/content/aip/journal/apl/100/6/10.1063/1.3685483
2012-02-09
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/6/10.1063/1.3685483
10.1063/1.3685483
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