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Magnetic-field effects in illuminated tetracene field-effect transistors
4. Ö. Mermer, G. Veeraraghavan, T. L. Francis, Y. Sheng, D. T. Nguyen, M. Wohlgenannt, A. Köhler, M. K. Al-Suti, and M. S. Khan, Phys. Rev. B 72, 205202 (2005).
16. V. K. Thorsmølle, R. D. Averitt, J. Demsar, D. L. Smith, S. Tretiak, R. L. Martin, X. Chi, B. K. Crone, A. P. Ramirez, and A. J. Taylor, Phys. Rev. Lett. 102, 017401 (2009).
17. M. Schwoerer and H. C. Wolf, Organische Molekulare Festkörper (Wiley, Weinheim, 2005), p. 150.
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We report on magnetic-field effects in illuminated tetracene field-effect transistors. A decrease in the photocurrent is observed when an external magnetic field is applied. In this case, the resistance of the conducting channel increases by up to 0.75%, which leads to positive magnetoresistance. This can be attributed to: (1) A magnetic field-induced decrease in the interaction rate between triplet excitons and trapped holes. (2) The coupling between the singlet and the triplet manifold of states is decreased in a magnetic field and, hence, the singlet exciton fission and triplet excitonfusion rate constants are reduced.
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