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Magnetic-field effects in illuminated tetracene field-effect transistors
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/content/aip/journal/apl/100/7/10.1063/1.3684835
2012-02-14
2014-09-02

Abstract

We report on magnetic-field effects in illuminated tetracene field-effect transistors. A decrease in the photocurrent is observed when an external magnetic field is applied. In this case, the resistance of the conducting channel increases by up to 0.75%, which leads to positive magnetoresistance. This can be attributed to: (1) A magnetic field-induced decrease in the interaction rate between triplet excitons and trapped holes. (2) The coupling between the singlet and the triplet manifold of states is decreased in a magnetic field and, hence, the singlet exciton fission and triplet excitonfusion rate constants are reduced.

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Scitation: Magnetic-field effects in illuminated tetracene field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/7/10.1063/1.3684835
10.1063/1.3684835
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