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Magnetic-field effects in illuminated tetracene field-effect transistors
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FIG. 1.

(Color online) Output (a) and transfer (Vds  = −2 V) (b) characteristics of a tetracene-based FET (L = 2.5 μm and W = 10 mm) measured in darkness, under illumination and in a magnetic field. The illumination intensity and the magnetic field were 51 mW/cm2 and 60 mT, respectively. The orange lines indicate the fitting of the curve for extracting Vth and μ, respectively.

Image of FIG. 2.

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FIG. 2.

(Color online) (a) Raw data of magnetic field effect on photocurrent in tetracene FETs recorded at Vds  = −2 V and Vg  = −1 V. The illumination intensity and magnetic field were 51 mW/cm2 and 60 mT, respectively. (b) Zoom-view of part (a). The dashed line represents the baseline for the calculation of the photocurrent change due to the magnetic field. (c) The corresponding change in the photocurrent.

Image of FIG. 3.

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FIG. 3.

(Color online) MR plotted as a function of (a) Vg at Vds  = −2 V and as a function of (b) Vds at Vg  = −1 V, respectively. The light intensity and the magnetic field were 51 mW/cm2 and 60 mT, respectively. (c) MR and photocurrent plotted as a function of illumination intensity, calculated at Vds  = −2 V and Vg  = −1 V, respectively. The magnetic field strength was 60 mT. (d) MR plotted as a function of magnetic field, measured at Vds  = −2 V and Vg  = −1 V and an illumination intensity of 51 mW/cm2.

Image of FIG. 4.

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FIG. 4.

(Color online) Schematic energy level diagram of tetracene (see text for details). Here, S0 represents the ground state, S1 the lowest singlet exciton, Sn the higher-lying states in the singlet manifold, T1 the lowest triplet exciton, and (T1 + T1) double-triplet-exciton produced by fission (see Refs. 10 and 15–17).

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/content/aip/journal/apl/100/7/10.1063/1.3684835
2012-02-14
2014-04-21

Abstract

We report on magnetic-field effects in illuminated tetracene field-effect transistors. A decrease in the photocurrent is observed when an external magnetic field is applied. In this case, the resistance of the conducting channel increases by up to 0.75%, which leads to positive magnetoresistance. This can be attributed to: (1) A magnetic field-induced decrease in the interaction rate between triplet excitons and trapped holes. (2) The coupling between the singlet and the triplet manifold of states is decreased in a magnetic field and, hence, the singlet exciton fission and triplet excitonfusion rate constants are reduced.

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Scitation: Magnetic-field effects in illuminated tetracene field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/7/10.1063/1.3684835
10.1063/1.3684835
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