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(Color online) (a) Cross sectional view of a top-gated GeNW field-effect device; (b) a representative image of Scanning-Electron-Microscopy (SEM) of the device.
Coulomb oscillation characteristics of the top-gated GeNW dot with Vds = 0.3 mV at liquid helium temperature; the magnitudes of first successive five oscillations are increased by five factors for clarity and the arrow at −485 mV indicates the position of first Ids peak. The inset shows a charge stability diagram around pinch-off Vtg . The gray gradient from dark to white represents change of conductance from high to low value, respectively. The position of first peak is deduced from the closing point of the two broken lines. Solid arrows a and b indicate the first exciting energy level and open arrow c points out the high conductance line arising from mesoscopic density-of-states fluctuations in source/drain contacts.
Charge stability diagram of the top-gated GeNW dot at liquid helium temperature; as numbered in the diamond shaped regions, the GeNW-QD could be tuned with successive single-electron from zero to ten by applying Vtg from −485 to −145 mV. The inset shows the addition energy (Ea ) as the function of number of electrons (N).
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