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Low operation voltage and high thermal stability of a WSi2 nanocrystal memory device using an Al2O3/HfO2/Al2O3 tunnel layer
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10.1063/1.3684967
/content/aip/journal/apl/100/7/10.1063/1.3684967
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/7/10.1063/1.3684967
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Cross-sectional 3D-schematic diagram and photograph of the WSi2 nanocrystal memory device with an AHA tunnel layer. (b) A cross-sectional FE-TEM image of WSi2 nanocrystals between the AHA tunnel and SiO2 control oxide layers.

Image of FIG. 2.
FIG. 2.

(Color online) Transfer characteristics of the WSi2 nanocrystal memory device with an AHA tunnel layer at 25 °C after applying program (+)/erase (−) voltages of ±5, ±6, ±7, ±8, and ±9 V.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Program/erase voltages and (b) speeds characteristics of the WSi2 nanocrystal memory device with AHA tunnel layer at 25, 50, 75, 100, and 125 °C.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Retention and (b) normalized charge loss characteristics of the WSi2 nanocrystal memory device with a AHA tunnel layer at 25, 50, 75, 100, and 125 °C. The inset figure in (b) shows the Arrhenius plots for the activation energy of the charge loss ratio in region I.

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/content/aip/journal/apl/100/7/10.1063/1.3684967
2012-02-13
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low operation voltage and high thermal stability of a WSi2 nanocrystal memory device using an Al2O3/HfO2/Al2O3 tunnel layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/7/10.1063/1.3684967
10.1063/1.3684967
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