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ON-OFF switching mechanism of resistive–random–access–memories based on the formation and disruption of oxygen vacancy conducting channels
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10.1063/1.3685222
/content/aip/journal/apl/100/7/10.1063/1.3685222
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/7/10.1063/1.3685222
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Formation energy diagram for the (a) isolated-VO model, (b) VO-chain model, (c) partial-VO-chain model, and (d) disrupted-VO model. The insets in the figure show initial atomistic structure of each model.

Image of FIG. 2.
FIG. 2.

VO cohesive energy as a function of charge state q for the VO-chain model with respect to the isolated-VO model.

Image of FIG. 3.
FIG. 3.

(Color online) Schematic picture of the cohesion-disruption of the conducting channel.

Image of FIG. 4.
FIG. 4.

Energy band structures for the (a) isolated-VO model in the intrinsic state, (b) VO-chain model in the two-electron-captured state, (c) partial-VO-chain model in the intrinsic state, and (d) disrupted-VO model in the intrinsic state. Energy band for rutile TiO2 bulk is also shown in the figure. The horizontal dotted lines indicate the position of the Fermi level.

Image of FIG. 5.
FIG. 5.

(Color online) Schematic picture of the bipolar or unipolar switching mechanism in oxide-based ReRAMs. I-V curves for each switching behavior are also shown schematically.

Image of FIG. 6.
FIG. 6.

(Color online) Schematic picture of the guiding principle for high quality oxide-based ReRAMs for the (a) bipolar set process, (b) bipolar reset process, and (c) unipolar set process. The VBT and CBB stand for valence band top and conduction band bottom, respectively, while FNT and PF indicate Fowler-Nordheim tunneling and Poole-Frenkel, respectively.

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/content/aip/journal/apl/100/7/10.1063/1.3685222
2012-02-13
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: ON-OFF switching mechanism of resistive–random–access–memories based on the formation and disruption of oxygen vacancy conducting channels
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/7/10.1063/1.3685222
10.1063/1.3685222
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