1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Threading dislocation reduction in transit region of GaN terahertz Gunn diodes
Rent:
Rent this article for
USD
10.1063/1.3685468
/content/aip/journal/apl/100/7/10.1063/1.3685468
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/7/10.1063/1.3685468

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagrams of GaN Gunn diode with (a) BNL and (b) TNL structures.

Image of FIG. 2.
FIG. 2.

Electron concentration profiles of multiple-epitaxial for 1-μm GaN Gunn diode with (a) BNL and (b) TNL structures.

Image of FIG. 3.
FIG. 3.

Diffraction vector g = 11-20 weak beam cross-section TEM images of (a) BNL and (b) TNL structures, where each layer marked in the image corresponds to that in Fig. 1 and arrows label dislocation loops that lead to TDs annihilation.

Image of FIG. 4.
FIG. 4.

Growth mode transition from 1D to 2D (a)-(c), and from 2D to 1D (d)-(f): (a) macrosteps approach dislocation lines; (b) dislocations begin to bend; (c) dislocation loop forms and leads to TDs annihilation; (d) growth mesa associated with a TD begins to be buried by GaN monolayer; (e) GaN monolayer deposit on the surface and advances towards the top; (f) GaN monolayer deposition goes over the mesa top and TDs keep on propagating.

Image of FIG. 5.
FIG. 5.

Comparison of (a) HDXRD measurement at ω-2θ scan mode and (b) Raman measurement at expanded spectra of E2 (high) phonon peak area between BNL and TNL structures.

Tables

Generic image for table
Table I.

Variation of TDs density with notch-doping layer position.

Loading

Article metrics loading...

/content/aip/journal/apl/100/7/10.1063/1.3685468
2012-02-14
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Threading dislocation reduction in transit region of GaN terahertz Gunn diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/7/10.1063/1.3685468
10.1063/1.3685468
SEARCH_EXPAND_ITEM