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Schematic diagrams of GaN Gunn diode with (a) BNL and (b) TNL structures.
Electron concentration profiles of multiple-epitaxial for 1-μm GaN Gunn diode with (a) BNL and (b) TNL structures.
Diffraction vector g = 11-20 weak beam cross-section TEM images of (a) BNL and (b) TNL structures, where each layer marked in the image corresponds to that in Fig. 1 and arrows label dislocation loops that lead to TDs annihilation.
Growth mode transition from 1D to 2D (a)-(c), and from 2D to 1D (d)-(f): (a) macrosteps approach dislocation lines; (b) dislocations begin to bend; (c) dislocation loop forms and leads to TDs annihilation; (d) growth mesa associated with a TD begins to be buried by GaN monolayer; (e) GaN monolayer deposit on the surface and advances towards the top; (f) GaN monolayer deposition goes over the mesa top and TDs keep on propagating.
Comparison of (a) HDXRD measurement at ω-2θ scan mode and (b) Raman measurement at expanded spectra of E2 (high) phonon peak area between BNL and TNL structures.
Variation of TDs density with notch-doping layer position.
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