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Response to “Comment on ‘Forming-free resistive switching in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature’” [Appl. Phys. Lett. 100, 076101 (2012)]
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1. T. M. Pan and C. H. Lu, Appl. Phys. Lett. 99, 113509 (2011).
http://dx.doi.org/10.1063/1.3638490
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2. V. V. Atuchin, Appl. Phys. Lett. 100, 076101 (2012).
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3. Y. Uwamino, Y. Ishizuka, and H. Yamatera, J. Electron Spectrosc. Relat. Phenom. 34, 67 (1984).
http://dx.doi.org/10.1016/0368-2048(84)80060-2
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2012-02-13
2014-08-21

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Scitation: Response to “Comment on ‘Forming-free resistive switching in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature’” [Appl. Phys. Lett. 100, 076101 (2012)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/7/10.1063/1.3685471
10.1063/1.3685471
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