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Enhancing magnetic vacancies in semiconductors by strain
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10.1063/1.3685488
/content/aip/journal/apl/100/7/10.1063/1.3685488
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/7/10.1063/1.3685488
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic plot of total energy vs volume for host and host+vacancy. ΔE means the energy difference between host and host+vacancy.

Image of FIG. 2.
FIG. 2.

(Color online) Differential electron density plots for (a) BN and (b) ZnO, respectively. The dark balls denote B (Zn) atoms, while light ones are N (O) atoms.

Image of FIG. 3.
FIG. 3.

(Color online) The plots of total energy as a function of lattice strain for (a) BN and (b) ZnO, respectively. The energy of structures without strain is taken as reference. (c) and (d) are the plots of formation energy as a functional of lattice strain for BN and ZnO, respectively.

Image of FIG. 4.
FIG. 4.

(Color online) Atomic displacment (indicated by solid arrows) of BN and ZnO by creating cation-vacancies. The dark balls mean B (Zn) atoms, while light ones are N (O) atoms.

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/content/aip/journal/apl/100/7/10.1063/1.3685488
2012-02-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancing magnetic vacancies in semiconductors by strain
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/7/10.1063/1.3685488
10.1063/1.3685488
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