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Fabrication of high-performance fully depleted silicon-on-insulator based dual-gate ion-sensitive field-effect transistor beyond the Nernstian limit
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10.1063/1.3685497
/content/aip/journal/apl/100/7/10.1063/1.3685497
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/7/10.1063/1.3685497
/content/aip/journal/apl/100/7/10.1063/1.3685497
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/content/aip/journal/apl/100/7/10.1063/1.3685497
2012-02-14
2014-09-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of high-performance fully depleted silicon-on-insulator based dual-gate ion-sensitive field-effect transistor beyond the Nernstian limit
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/7/10.1063/1.3685497
10.1063/1.3685497
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