No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Mechanical cleaning of graphene
8. C. Dean, A. Young, I. Meric, C. Lee, L. Wang, S. Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K. Shepard, and J. Hone, Nat. Nanotechnol. 5, 722 (2010).
11. Y. Zhang, T. Tang, C. Girit, Z. Hao, M. C. Martin, A. Zettl, M. F. Crommie, Y. R. Shen, and F. Wang, Nature 459, 820 (2009).
13. A. S. Mayorov, D. C. Elias, M. Mucha-Kruczynski, R. V. Gorbachev, T. Tudorovskiy, A. Zhukov, S. V. Morozov, M. I. Katsnelson, V. I. Fal’ko, A. K. Geim et al., Science 333, 860 (2011).
14. R. Jalilian, L. A. Jauregui, G. Lopez, J. Tian, C. Roecker, M. M. Yazdanpanah, R. W. Cohn, I. Jovanovic, and Y. P. Chen, Nanotechnology 22, 295705 (2011).
Article metrics loading...
Contamination of graphene due to residues from nanofabrication often introduces background doping and reduces electron mobility. For samples of high electronic quality, post-lithography cleaning treatments are therefore needed. We report that mechanical cleaning based on contact mode atomic force microscopy removes residues and significantly improves the electronic properties. A mechanically cleaned dual-gated bilayer graphene transistor with hexagonal boron nitride dielectrics exhibited a mobility of ∼36 000 cm2/Vs at low temperature.
Full text loading...
Most read this month