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Mechanical cleaning of graphene
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/content/aip/journal/apl/100/7/10.1063/1.3685504
2012-02-16
2014-07-22

Abstract

Contamination of graphene due to residues from nanofabrication often introduces background doping and reduces electron mobility. For samples of high electronic quality, post-lithography cleaning treatments are therefore needed. We report that mechanical cleaning based on contact mode atomic force microscopy removes residues and significantly improves the electronic properties. A mechanically cleaned dual-gated bilayer graphene transistor with hexagonal boron nitride dielectrics exhibited a mobility of ∼36 000 cm2/Vs at low temperature.

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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mechanical cleaning of graphene
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/7/10.1063/1.3685504
10.1063/1.3685504
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