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Well-to-well non-uniformity in InGaN/GaN multiple quantum wells characterized by capacitance-voltage measurement with additional laser illumination
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/content/aip/journal/apl/100/7/10.1063/1.3685717
2012-02-16
2014-08-23

Abstract

We experimentally investigated well-to-well non-uniformity in InGaN/GaN multiple quantum well(MQW) structures by using capacitance-voltage measurements with additional laser illumination. By varying the illuminating power of the resonant excitation, well-to-well non-uniformity through the MQWs was clearly revealed. The quantum wells(QWs) close to the n-GaN side show higher carrier accumulations and larger position shift as the excitation power is increased, relative to the p-side QWs. Both results were attributed to the existence of stronger piezoelectric fields in the n-side QWs induced by subsequent partial relaxation of strain through the MQWs.

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Scitation: Well-to-well non-uniformity in InGaN/GaN multiple quantum wells characterized by capacitance-voltage measurement with additional laser illumination
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/7/10.1063/1.3685717
10.1063/1.3685717
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