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(Color online) Top left: microscope image of the mask after processing. Bottom right: conductance in function of perimeter for 16 × 104 μm2 diodes and conductance for the diodes with perimeter of 1000, 1100 and 1200 μm. Main: I-V characteristics of 16 × 104 μm2 diodes.
(Color online) Top left: resistances in the Look’s bi-layer model. Bottom right: I-V curves for 5 μm to 30 μm spacings. Main: measured TLM resistances RTLM in function of spacing, with standard 1-layer linear extrapolation yielding an apparent sheet concentration of 1130 Ω/□ and an apparent specific contact resistance of 2–3 × 10−4 Ω cm2 and best fit with a 2-layer TLM model, with R S 1 = 1830 Ω/□, R S 2 = 2900 Ω/□, ρC 1 = 1.1 × 10−4 Ω cm2 and ρC 2 = 7 × 10−4 Ω cm2. The thin dotted line is the expected TLM resistance if current was only going through the SEAL, assuming R S 1 = 1830 Ω/□.
(Color online) Sheet conductance of a 400 nm and a 50 nm thick InN:Mg film as function of temperature. The open symbols are the estimated sheet conductance of the SEAL of the 400 nm InN:Mg sample in function of temperature, assuming the same relative temperature dependence than the 50 nm InN:Mg sample. For this estimation the low temperature (when only the SEAL is conductive) conductance of the 50 nm InN:Mg sample was scaled to that of the 400 nm film. The contribution of the bulk for the 50 nm InN:Mg sample (estimated in Ref. 8) is corrected for in the vertically-offset data points but has only a minor influence.
Area and perimeter of the diodes.
Best least square fit of equation (1) to the data RTLM .
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