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Coupling resistance between n-type surface accumulation layer and p-type bulk in InN:Mg thin films
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Image of FIG. 1.
FIG. 1.

(Color online) Top left: microscope image of the mask after processing. Bottom right: conductance in function of perimeter for 16 × 104  μm2 diodes and conductance for the diodes with perimeter of 1000, 1100 and 1200 μm. Main: I-V characteristics of 16 × 104  μm2 diodes.

Image of FIG. 2.
FIG. 2.

(Color online) Top left: resistances in the Look’s bi-layer model. Bottom right: I-V curves for 5 μm to 30 μm spacings. Main: measured TLM resistances RTLM in function of spacing, with standard 1-layer linear extrapolation yielding an apparent sheet concentration of 1130 Ω/ and an apparent specific contact resistance of 2–3 × 10−4 Ω cm2 and best fit with a 2-layer TLM model, with R S 1 = 1830 Ω/, R S 2 = 2900 Ω/, ρC 1 = 1.1 × 10−4 Ω cm2 and ρC 2 = 7 × 10−4 Ω cm2. The thin dotted line is the expected TLM resistance if current was only going through the SEAL, assuming R S 1 = 1830 Ω/.

Image of FIG. 3.
FIG. 3.

(Color online) Sheet conductance of a 400 nm and a 50 nm thick InN:Mg film as function of temperature. The open symbols are the estimated sheet conductance of the SEAL of the 400 nm InN:Mg sample in function of temperature, assuming the same relative temperature dependence than the 50 nm InN:Mg sample. For this estimation the low temperature (when only the SEAL is conductive) conductance of the 50 nm InN:Mg sample was scaled to that of the 400 nm film. The contribution of the bulk for the 50 nm InN:Mg sample (estimated in Ref. 8) is corrected for in the vertically-offset data points but has only a minor influence.


Generic image for table
Table I.

Area and perimeter of the diodes.

Generic image for table
Table II.

Best least square fit of equation (1) to the data RTLM .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Coupling resistance between n-type surface accumulation layer and p-type bulk in InN:Mg thin films