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Schematic interface of the semi-polar AlGaN/GaN heterostructure, together with a misfit dislocation line.
Scattering time associated with misfit dislocations vs the angle θ between the initial vector k i and the x-axis, with the dislocation density Ndis = 2 × 105 cm−1 and the 2DEG sheet density Ns = 5 × 1012 cm−2. The inset shows a typical anisotropic scattering event, in which the scattering wave vector q has no component of qy.
2DEG mobility associated with the misfit dislocation lines oriented along the y-axis versus the angle α between the electric field and the x-axis, with the dislocation density and the 2DEG density being taken as Ndis = 2 × 105 cm−1 and Ns = 5 × 1012 cm−2, respectively.
2DEG mobility associated with the misfit dislocations versus the 2DEG density Ns at low temperature limit, with the applied electric field along the x-axis.
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