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Direct measurements and numerical simulations of gas charging in microelectromechanical system capacitive switches
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10.1063/1.3688176
/content/aip/journal/apl/100/8/10.1063/1.3688176
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/8/10.1063/1.3688176

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (top) SEM of a typical MEMS structure and (bottom) I-V curves obtained from measurements for typical MEMS structures compared with the F-N theory for various values of field enhancement factor . The gap for device 1 was 2.8 μm and the gap for device 2 was 3.3 μm.

Image of FIG. 2.
FIG. 2.

(Color online) Comparison of ion and electron number density profiles across the 3 μm nitrogen gap for an applied voltage of 153 V and 155 V. The solid lines with filled symbols correspond to 155 V and the dashed lines with open symbols correspond to 153 V. The diamond symbols correspond to ions and the circles correspond to electrons.

Image of FIG. 3.
FIG. 3.

(Color online) Comparison of ion and electron current density profiles across the 3 μm nitrogen gap for an applied voltage of 153 V and 155 V. The solid lines with filled symbols correspond to 155 V and the dashed lines with open symbols correspond to 153 V. The diamond symbols correspond to ions and the circles correspond to electrons.

Tables

Generic image for table
Table I.

Summary of discharge parameters for a 3 μm nitrogen gap for various applied voltages.

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/content/aip/journal/apl/100/8/10.1063/1.3688176
2012-02-22
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct measurements and numerical simulations of gas charging in microelectromechanical system capacitive switches
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/8/10.1063/1.3688176
10.1063/1.3688176
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