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Enhanced electrical stability of organic thin-film transistors with polymer semiconductor-insulator blended active layers
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FIG. 1.

(Color online) Schematic diagram of bottom-contact OTFTs and chemical structure of PQTBTz-C12 and PMMA used in this study (left) and the optical micrograph (channel length = 100 μm) (right).

Image of FIG. 2.

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FIG. 2.

(Color online) (a) TOF-SIMS depth profiles of oxygen and sulfur in blended PQTBTz-C12 and PMMA. The graph shows phase separation of PMMA (upper)/PQTBTz-C12 (lower). (b) High-resolution x-ray scattering patterns of PQTBTz-C12 and PMMA blended films. (c) AFM image of PQTBTz-C12 and PMMA blended films.

Image of FIG. 3.

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FIG. 3.

(Color online) Output curve (VGS : 0 V ∼ −40 V) of devices with W = 1000 μm and L = 100 μm (a) based on single PQTBTz-C12 and (b) based on PQTBTz-C12/PMMA blended films. Transfer characteristics of (c) the PQTBTz-C12 based OTFT and (d) the PQTBTz-C12/PMMA blend based OTFT.

Image of FIG. 4.

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FIG. 4.

(Color online) Threshold voltage shift (ΔVT ) upon negative gate bias stress and positive gate bias stress of (a) the PQTBTz-C12 based OTFT and (b) the PQTBTz-C12/PMMA blend based OTFT after 10 000 s. (c) ΔVT as a stretched exponential function of stress time for negative (V GS  = −20 V) and positive (VGS  = 20 V) gate bias condition for the PQTBTz-C12 and the PQTBTz-C12/PMMA blend based OTFT. (d) Schematic cross-sections showing negative dipoles of carboxyl groups in PMMA, which prevent hole accumulation at the channel.

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/content/aip/journal/apl/100/8/10.1063/1.3688177
2012-02-22
2014-04-19

Abstract

We report on an enhanced electrical stability of organic thin-film transistors (OTFTs), where an organic semiconductor (poly(didodecylquaterthiophene-alt-didodecylbithiazole) (PQTBTz-C12)) and a polymerinsulator (poly(methyl methacrylate) (PMMA)) blended film were used as the active layer, in comparison with a single PQTBTz-C12 OTFT. While both devices exhibit similar electrical performance in terms of mobility and ON/OFF ratios, the blended device is less susceptible to OFF-bias stress. It is suggested that the carboxyl groups of PMMA in the blend may act as suppressors with regards to hole accumulation in the channel, and thus, the PQTBTz-C12/PMMA blend based OTFTs exhibit delayed threshold voltage shifts under OFF-bias stress.

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Scitation: Enhanced electrical stability of organic thin-film transistors with polymer semiconductor-insulator blended active layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/8/10.1063/1.3688177
10.1063/1.3688177
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