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Bi2Te3−xSx crystal with labels of the locations where the three small single crystals (I, IIa, and III) were cut for the structural studies. Three slices were cut (I, IIb, and III) for Hall measurements.
(Color online) Schematic of the screening probe used for measuring electrical conductivity and Seebeck coefficient.
(Color online) Crystal structure of Bi2Te3−xSx (showing groups of quintuple-layer of Te1(S)-Bi-S2-Bi-Te1(S)) on the left and of Bi2Te3 on the right. The position of the van der Waals planes (arrows) are illustrated.
Seebeck coefficient and carrier concentration of the Bi2Te3−xSx crystal as a function of the distance along the 4.5 cm axis.
Seebeck coefficient as a function of distance along the long-axis of the crystal (positions indicated are in the unit of mm from location I). The standard deviation was calculated with 20 measurements per each position.
Crystallographic data for Bi2Te3−xSx (space group R m, and Z= 3).
Shortest interatomic distances (Å) in the Bi2Te3−xSx crystals. The Te1 site in Bi2Te3−xSx has 21% S in (I), 23% S in (II) and 24% S in (III).
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