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Comparison of thermal and atomic-layer-deposited oxides on 4H-SiC after post-oxidation-annealing in nitric oxide
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10.1063/1.3689766
/content/aip/journal/apl/100/8/10.1063/1.3689766
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/8/10.1063/1.3689766

Figures

Image of FIG. 1.
FIG. 1.

(Color online) C-V characteristics of MOS capacitors with (a) thermally grown oxides and (b) ALD oxides as a function of NO POA duration.

Image of FIG. 2.
FIG. 2.

(Color online) Dit distributions as a function of energy level.

Image of FIG. 3.
FIG. 3.

(Color online) Id–Vg characteristics and Vth of MOSFETs using (a) thermally grown oxide only, (b) thermally grown oxide with 120 min NO POA, and (c) ALD oxide with 180 min NO POA.

Image of FIG. 4.
FIG. 4.

(Color online) μ FE of MOSFETs using thermally grown oxide only, thermally grown oxide with 120 min NO POA, and ALD oxide with 180 min NO POA.

Tables

Generic image for table
Table I.

A comparison of effective oxide charge (Qeff), Nit, VFB, and oxide thickness for all samples.

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/content/aip/journal/apl/100/8/10.1063/1.3689766
2012-02-24
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparison of thermal and atomic-layer-deposited oxides on 4H-SiC after post-oxidation-annealing in nitric oxide
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/8/10.1063/1.3689766
10.1063/1.3689766
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