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In-situ x-ray characterization of wurtzite formation in GaAs nanowires
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Sketch of the NW growth and in-situ x-ray characterization setup. The diffracted x-rays are detected with a CCD camera and the relative intensities arising from scattering in different crystal planes are found by integrating around the pixels containing the corresponding Bragg peak.

Image of FIG. 2.
FIG. 2.

(Color online) WZ structure formation analysis of two independent growths, A (a, b) and B (c, d). The blue (dark grey in print) points in (a) and (c) show the intensities of single images of the WZ [1 0 −1 1] Bragg peak during the complete growth cycle. The red (light grey in print) points give the corresponding gradients, which is a direct measure for the formation of WZ structure (the solid line is a guide to the eye). The grey regions indicate periods where the Ga flux is changed between V/III ratios of 7 and 20, except the last two changes in growth A, which were done with a corresponding change in the As flux. In (b), a section of (a) is shown and it includes the second derivative of the intensity, , which is measure of how the WZ formation rate, , is changing. If is positive (negative), is increasing (decreasing). The curves in (b) have been smoothed for clarity. (d) shows the FWHM in units of CCD pixels which is an inverse measure of the average WZ crystal size during growth.

Image of FIG. 3.
FIG. 3.

(Color online) TEM images of the two different types of NWs from growth B. The structure along the length was identified using convergent beam electron diffraction analysis. As seen in the straight wires (a) there are three sections with WZ structure, which corresponds to the three regions of high WZ formation in Fig. 2(c). In the wires which suffered a bulge formation, the WZ segment seen in (b) corresponds to the first segment in (a). However, these segments are either much shorter or even absent in the "bulged" wires due to a crystal phase transition from WZ to ZB. Scale bars are (a) 500 nm, (b) 500 nm, and (c) 100 nm.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In-situ x-ray characterization of wurtzite formation in GaAs nanowires