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(Color online) Bird’s-eye view of the SEM image of a ridge-shaped AlGaInP/GaInP QW structure fabricated by using selective-area MOVPE.
(Color online) Comparison of the temperature-dependent PL intensities of the ridge structure with those of a reference sample grown on a planar substrate.
(Color online) Cross-sectional SEM image of the ridge sample with a relatively thick GaInP well layer.
(Color online) Polar plot of the emission patterns of the ridge sample shown in Fig. 1 measured at different temperatures.
(Color online) Electric field intensity around the ridge-top area of the AlGaInP/GaInP ridge structure simulated by using the FDTD method.
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