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Enhancement of light extraction efficiency by evanescent wave coupling effect in ridge-shaped AlGaInP/GaInP quantum wells
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10.1063/1.3689005
/content/aip/journal/apl/100/9/10.1063/1.3689005
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/9/10.1063/1.3689005
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Bird’s-eye view of the SEM image of a ridge-shaped AlGaInP/GaInP QW structure fabricated by using selective-area MOVPE.

Image of FIG. 2.
FIG. 2.

(Color online) Comparison of the temperature-dependent PL intensities of the ridge structure with those of a reference sample grown on a planar substrate.

Image of FIG. 3.
FIG. 3.

(Color online) Cross-sectional SEM image of the ridge sample with a relatively thick GaInP well layer.

Image of FIG. 4.
FIG. 4.

(Color online) Polar plot of the emission patterns of the ridge sample shown in Fig. 1 measured at different temperatures.

Image of FIG. 5.
FIG. 5.

(Color online) Electric field intensity around the ridge-top area of the AlGaInP/GaInP ridge structure simulated by using the FDTD method.

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/content/aip/journal/apl/100/9/10.1063/1.3689005
2012-02-29
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement of light extraction efficiency by evanescent wave coupling effect in ridge-shaped AlGaInP/GaInP quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/9/10.1063/1.3689005
10.1063/1.3689005
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