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Influence of a depletion layer on localized surface waves in doped semiconductor nanostructures
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10.1063/1.3689747
/content/aip/journal/apl/100/9/10.1063/1.3689747
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/9/10.1063/1.3689747
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic view of the grating with a TM polarized incident field. (b) Scanning electron microscope images of the fabricated n-GaAs grating.

Image of FIG. 2.
FIG. 2.

(Color online) Experimental reflectivity spectra of the sample (flat surface and grating) measured at various angles of incidence in TM and TE polarization.

Image of FIG. 3.
FIG. 3.

(Color online) Comparison of the measured reflectivity of the GaAs grating ( = 45°, TM polarized) with the theoretical reflectivity obtained with three models: (a) walls uniformly filled with electrons, (b) fully depeleted walls, and (c) “core-shell” model.

Image of FIG. 4.
FIG. 4.

Real part of the electric field along the x direction at 35.3 μm for  = 45° and TM-polarization. One period is shown. The black line indicates the surface of the grating.

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/content/aip/journal/apl/100/9/10.1063/1.3689747
2012-02-27
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of a depletion layer on localized surface waves in doped semiconductor nanostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/9/10.1063/1.3689747
10.1063/1.3689747
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