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Dopant characterization in self-regulatory plasma doped fin field-effect transistors by atom probe tomography
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10.1063/1.3690864
/content/aip/journal/apl/100/9/10.1063/1.3690864
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/9/10.1063/1.3690864
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional STEM image of fin arrays. Trenches between the fins filled with amorphous silicon. No significant void between the fins and the amorphous-silicon was observed.

Image of FIG. 2.
FIG. 2.

(Color online) 3D elemental maps of the fin structure: (a) around the top and sidewall region and (b) around the sidewall and bottom regions. Observed regions are indicated by solid curves in the upper-left insets. (c) 1D concentration profiles of 30Si across the top of the fin. (d) Projected 2D concentration profiles of boron along the fin direction, overlapped with a cross-sectional STEM image.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Observed region is indicated by a solid curve. (b) 3D elemental map of a specimen tilted at approximately 45°. Projected 2D concentration profiles of oxygen and boron along the fin direction overlapped with cross-sectional STEM images are shown in (c) and (d), respectively. (d) 1D concentration profiles of oxygen and boron across the (i) top, (ii) sidewall, and (iii) bottom regions.

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/content/aip/journal/apl/100/9/10.1063/1.3690864
2012-02-29
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dopant characterization in self-regulatory plasma doped fin field-effect transistors by atom probe tomography
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/9/10.1063/1.3690864
10.1063/1.3690864
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