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Room-temperature anomalous Hall effect in amorphous Si-based magnetic semiconductor
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Image of FIG. 1.
FIG. 1.

(Color online) Mn K-edge EXAFS data for the a-Si89.5Mn10.5:H samples. Fine lines: experimental; Coarse lines: curve fitting. Curves have been shifted vertically for the sake of clarity.

Image of FIG. 2.
FIG. 2.

(Color online) Magnetic properties of an a-Si89.5Mn10.5:H sample. (a) M-H curves measured at 10 K of as-deposited and post-annealed a-Si89.5Mn10.5:H samples annealed at 473 and 573 K, respectively, for 1.8 ks and (b) M-T curves of post-annealed a-Si89.5Mn10.5:H samples, ZFC or FC under magnetic fields 0.1, 0.3, and 0.6 T, respectively.

Image of FIG. 3.
FIG. 3.

(Color online) Hall resistance, RHall , versus magnetic field curves of an a-Si89.5Mn10.5:H sample. The films were annealed for 1.8 ks at (a) 473 K and (b) 573 K then measured at 300 K. The inset shows the Hall resistance measured at 25 K to 300 K.

Image of FIG. 4.
FIG. 4.

(Color online) Temperature dependence of the saturation magnetization (Ms ). The curve was obtained by determining a quantity proportional to Ms from the extrapolated intercepts in transport measurements (Figure 3(b)).


Generic image for table
Table I.

The comparison in magnetic and electrical properties of as-deposited and post-annealed a-Si100 − xMnx:H films. Carrier concentration, conductivity measured at room temperature, and saturation magnetization of as-deposited and post-annealed (573 K/1.8 ks) a-Si89.5Mn10.5:H films measured at 10 K.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room-temperature anomalous Hall effect in amorphous Si-based magnetic semiconductor