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(Color online) Mn K-edge EXAFS data for the a-Si89.5Mn10.5:H samples. Fine lines: experimental; Coarse lines: curve fitting. Curves have been shifted vertically for the sake of clarity.
(Color online) Magnetic properties of an a-Si89.5Mn10.5:H sample. (a) M-H curves measured at 10 K of as-deposited and post-annealed a-Si89.5Mn10.5:H samples annealed at 473 and 573 K, respectively, for 1.8 ks and (b) M-T curves of post-annealed a-Si89.5Mn10.5:H samples, ZFC or FC under magnetic fields 0.1, 0.3, and 0.6 T, respectively.
(Color online) Hall resistance, RHall , versus magnetic field curves of an a-Si89.5Mn10.5:H sample. The films were annealed for 1.8 ks at (a) 473 K and (b) 573 K then measured at 300 K. The inset shows the Hall resistance measured at 25 K to 300 K.
(Color online) Temperature dependence of the saturation magnetization (Ms ). The curve was obtained by determining a quantity proportional to Ms from the extrapolated intercepts in transport measurements (Figure 3(b)).
The comparison in magnetic and electrical properties of as-deposited and post-annealed a-Si100 − xMnx:H films. Carrier concentration, conductivity measured at room temperature, and saturation magnetization of as-deposited and post-annealed (573 K/1.8 ks) a-Si89.5Mn10.5:H films measured at 10 K.
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