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Nonuniform current and spin accumulation in a 1 μm thick n-GaAs channel
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10.1063/1.3691175
/content/aip/journal/apl/100/9/10.1063/1.3691175
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/9/10.1063/1.3691175

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Geometry of the sample and measurement principle.

Image of FIG. 2.
FIG. 2.

(Color online) Kerr rotation along the n-GaAs channel for various applied voltages, representing the local spin polarization.

Image of FIG. 3.
FIG. 3.

(Color online) Hanle-curves for different applied bias voltages, measured at y-position −5 μm (top) and −10 μm (bottom). Fits using a one-dimensional model yield different values of the spin lifetime which are shown in Table I.

Image of FIG. 4.
FIG. 4.

(Color online) Two-dimensional drift-diffusion simulation of the spin accumulation in a 1 μm thick n-GaAs channel. Black lines represent the local current direction.

Tables

Generic image for table
Table I.

Spin lifetime from numerical simulations based on 1D and 2D drift-diffusion models at two different distances, y, from the contact edge and different bias voltages.11

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/content/aip/journal/apl/100/9/10.1063/1.3691175
2012-03-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonuniform current and spin accumulation in a 1 μm thick n-GaAs channel
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/9/10.1063/1.3691175
10.1063/1.3691175
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