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(Color online) Geometry of the sample and measurement principle.
(Color online) Kerr rotation along the n-GaAs channel for various applied voltages, representing the local spin polarization.
(Color online) Hanle-curves for different applied bias voltages, measured at y-position −5 μm (top) and −10 μm (bottom). Fits using a one-dimensional model yield different values of the spin lifetime which are shown in Table I.
(Color online) Two-dimensional drift-diffusion simulation of the spin accumulation in a 1 μm thick n-GaAs channel. Black lines represent the local current direction.
Spin lifetime from numerical simulations based on 1D and 2D drift-diffusion models at two different distances, y, from the contact edge and different bias voltages.11
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