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Ultra-low voltage, organic thin film transistors fabricated on plastic substrates by a highly reproducible process
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for the electrical characterization of bare Al2
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Organic thin film transistors have been fabricated on plastic substrates using a combination of two ultrathin insulating films, namely a 6 nm Al2O3film (grown by UV-Ozone treatment of a pre-deposited aluminium film) and a 25 nm parylene C film deposited by vapour phase, as gate dielectric. They show a very low leakage current density, around 2 × 10−9 A/cm2, and, most importantly, can be operated at voltages below 1 V. We demonstrate that this low-cost technique is highly reproducible and represents a step forward for the routine fabrication of ultra-low voltage plastic electronics.
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