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(Color online) Schematic diagrams of the key fabrication steps for GAA-RN TFTs: (a) the formation of SiO2 strips, (b) and (c) the formation of a-Si deposition, nanowires, and S/D pads, and (d) the cross-sectional illustration of the capped-oxide deposition and excimer-laser crystallization along AA′ direction of (c).
(Color online) SEM images of recessed nanowire with excimer laser crystallization (a) before and (b) after Secco-etching treatment.
(Color online) Cross-sectional transmission electron microscopy image of the fabricated GAA-RN TFTs.
(Color online) Transfer characteristics of GAA-RN and CP TFTs.
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