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Gate-all-around polycrystalline-silicon thin-film transistors with self-aligned grain-growth nanowire channels
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10.1063/1.3691184
/content/aip/journal/apl/100/9/10.1063/1.3691184
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/9/10.1063/1.3691184
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic diagrams of the key fabrication steps for GAA-RN TFTs: (a) the formation of SiO2 strips, (b) and (c) the formation of a-Si deposition, nanowires, and S/D pads, and (d) the cross-sectional illustration of the capped-oxide deposition and excimer-laser crystallization along AA′ direction of (c).

Image of FIG. 2.
FIG. 2.

(Color online) SEM images of recessed nanowire with excimer laser crystallization (a) before and (b) after Secco-etching treatment.

Image of FIG. 3.
FIG. 3.

(Color online) Cross-sectional transmission electron microscopy image of the fabricated GAA-RN TFTs.

Image of FIG. 4.
FIG. 4.

(Color online) Transfer characteristics of GAA-RN and CP TFTs.

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/content/aip/journal/apl/100/9/10.1063/1.3691184
2012-02-28
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gate-all-around polycrystalline-silicon thin-film transistors with self-aligned grain-growth nanowire channels
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/9/10.1063/1.3691184
10.1063/1.3691184
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