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Gate-all-around polycrystalline-silicon thin-film transistors with self-aligned grain-growth nanowire channels
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10.1063/1.3691184
/content/aip/journal/apl/100/9/10.1063/1.3691184
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/9/10.1063/1.3691184
/content/aip/journal/apl/100/9/10.1063/1.3691184
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/content/aip/journal/apl/100/9/10.1063/1.3691184
2012-02-28
2014-12-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gate-all-around polycrystalline-silicon thin-film transistors with self-aligned grain-growth nanowire channels
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/9/10.1063/1.3691184
10.1063/1.3691184
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