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(Color) Process flow of GOI network template by partial Ge evaporation and rapid-melting growth techniques (a), SEM images of Ge layers after pre-annealing (b) and (c), and after RTA (1000 °C, 1s) (d) and (e), and EBSD image of Ge layer after pre-annealing (600 °C, 30 min) and RTA (f).
(Color) (a) Ge coverage fraction before and after RTA (1000 °C, 1s) as a function of pre-annealing temperature (Tp = 550, 600 °C) and time (0–60 min) and (b) Ge retention ratio after RTA as a function of spacing area fraction before RTA, where results obtained from different pre-annealing conditions are plotted. Crystallinity after RTA is also denoted by closed or open symbols (▪, ♦: single-crystal, □, ◊: poly-crystal) in (b).
(Color) SEM images of Ge films with different thickness [(a) 50, (b) 350, and (c) 650 nm], which were grown on GOI network templates.
(Color) X-TEM image (a) of homo-epitaxially grown Ge film (650 nm thickness) on GOI template, and ED patterns obtained from overgrown Ge layer (b), template Ge layer (c), and Si (100) substrate (d).
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