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Typical EBL arrays of lines along (a)  and (b)  with a periodicity of 500 nm (scan areas are 3 × 3 μm2).
(a) Size evolution of Si and Ge NCs as a function of the nominal thickness of the dewetted film for (▿) c-Si, (▪) a-Si, and (•) a-Ge. AFM images and perimeter L(μm) histograms of Si NCs formed after 120 min annealing at 750 °C by (b) homogeneous dewetting and (c) heterogeneous dewetting (scan areas are 3 × 3 μm2).
AFM images after heterogeneous dewetting (EBL patterns) of 11 nm thick c-Si at 750 °C: (a) first step is a periodic breaking of the film (t = 10 min); (b) second step is the periodic alignment of NCs along the dewetted fronts along  (t = 30 min); (c) bi-dimensional periodic ordering of NCs induced when matching the NCs size and the pre-patterns 500 nm period (t = 120 min). The inset shows the same behaviour for a smaller period of the patterns (∼200 nm); (d) ordering of NCs along  lines (t = 30 min); (e) zoom of these NCs; (f) zoom of the NCs shape after longer annealing (t = 120 min); (g) bi-modal NCs size and periodicity after t = 120 min annealing.
AFM images of self-organized ultra-small nearly monodisperse Ge NCs (25 nm large) into 2D periodic arrays of lines, squares, and circles using heterogeneous dewetting of FIB patterned 5 nm thick a-Ge (t = 30 min; T = 750 °C).
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