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Design of free patterns of nanocrystals with ad hoc features via templated dewetting
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10.1063/1.4730620
/content/aip/journal/apl/101/1/10.1063/1.4730620
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/1/10.1063/1.4730620
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Figures

Image of FIG. 1.
FIG. 1.

Typical EBL arrays of lines along (a) [100] and (b) [110] with a periodicity of 500 nm (scan areas are 3 × 3 μm2).

Image of FIG. 2.
FIG. 2.

(a) Size evolution of Si and Ge NCs as a function of the nominal thickness of the dewetted film for (▿) c-Si, (▪) a-Si, and (•) a-Ge. AFM images and perimeter L(μm) histograms of Si NCs formed after 120 min annealing at 750 °C by (b) homogeneous dewetting and (c) heterogeneous dewetting (scan areas are 3 × 3 μm2).

Image of FIG. 3.
FIG. 3.

AFM images after heterogeneous dewetting (EBL patterns) of 11 nm thick c-Si at 750  °C: (a) first step is a periodic breaking of the film (t = 10 min); (b) second step is the periodic alignment of NCs along the dewetted fronts along [110] (t = 30 min); (c) bi-dimensional periodic ordering of NCs induced when matching the NCs size and the pre-patterns 500 nm period (t = 120 min). The inset shows the same behaviour for a smaller period of the patterns (∼200 nm); (d) ordering of NCs along [100] lines (t = 30 min); (e) zoom of these NCs; (f) zoom of the NCs shape after longer annealing (t = 120 min); (g) bi-modal NCs size and periodicity after t = 120 min annealing.

Image of FIG. 4.
FIG. 4.

AFM images of self-organized ultra-small nearly monodisperse Ge NCs (25 nm large) into 2D periodic arrays of lines, squares, and circles using heterogeneous dewetting of FIB patterned 5 nm thick a-Ge (t = 30 min; T = 750  °C).

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/content/aip/journal/apl/101/1/10.1063/1.4730620
2012-07-05
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Design of free patterns of nanocrystals with ad hoc features via templated dewetting
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/1/10.1063/1.4730620
10.1063/1.4730620
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