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Optical properties of ultrathin InAs quantum-well-heterostructures
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10.1063/1.4731783
/content/aip/journal/apl/101/1/10.1063/1.4731783
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/1/10.1063/1.4731783
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Calculated and experimental interband energy transitions and InAs-related photoluminescence in 16 nm-thick GaAs/AlGaAs multiple quantum wells as function of the position of InAs monolayer from the barrier (in MLs).

Image of FIG. 2.
FIG. 2.

Calculated hole and electron-state wave functions of a 16-nm thick GaAs/AlGaAs quantum well: without InAs insertion (a), with the InAs ML inserted at mid-well (b) and at 0.6 nm away from the barrier (c).

Image of FIG. 3.
FIG. 3.

Calculated dipole matrix element squared (Ep in eV) for transverse electric polarization between the Γ-like valence and conduction subbands of a 16-nm thick GaAs quantum well: without InAs insertion (a), with the InAs ML inserted at mid-well (b), and at 0.6 nm away from the barrier (c).

Image of FIG. 4.
FIG. 4.

Differential reflectivity measurements of 16-nm thick GaAs quantum wells: without InAs insertion (a), with the InAs ML inserted at mid-well (b), and at 0.6 nm away from the barrier (c).

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/content/aip/journal/apl/101/1/10.1063/1.4731783
2012-07-05
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical properties of ultrathin InAs quantum-well-heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/1/10.1063/1.4731783
10.1063/1.4731783
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