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Effects of rapid thermal annealing on GaAs1-xBix alloys
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10.1063/1.4731784
/content/aip/journal/apl/101/1/10.1063/1.4731784
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/1/10.1063/1.4731784
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL data of as-grown and annealed GaAsBi with Bi content of 0.04 measured at room temperature.

Image of FIG. 2.
FIG. 2.

(a) The PL improvement ratio of annealed samples with different Bi content. The samples were annealed at 700 °C for 30 s (b) The PL improvement ratio against annealing temperatures for GaAsBi pieces with x = 0.04 and 0.065

Image of FIG. 3.
FIG. 3.

The HR-XRD curves of GaAsBi sample (x = 0.065) at different annealing temperatures.

Image of FIG. 4.
FIG. 4.

Temperature dependent (a) and room temperature (b) PL of as-grown and annealed GaAsBi with Bi content 0.04 and 0.048. Both samples were annealed at 700 °C for 30 s.

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/content/aip/journal/apl/101/1/10.1063/1.4731784
2012-07-05
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of rapid thermal annealing on GaAs1-xBix alloys
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/1/10.1063/1.4731784
10.1063/1.4731784
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