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PL data of as-grown and annealed GaAsBi with Bi content of 0.04 measured at room temperature.
(a) The PL improvement ratio of annealed samples with different Bi content. The samples were annealed at 700 °C for 30 s (b) The PL improvement ratio against annealing temperatures for GaAsBi pieces with x = 0.04 and 0.065
The HR-XRD curves of GaAsBi sample (x = 0.065) at different annealing temperatures.
Temperature dependent (a) and room temperature (b) PL of as-grown and annealed GaAsBi with Bi content 0.04 and 0.048. Both samples were annealed at 700 °C for 30 s.
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