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SRIM simulated depth profiles of various Cn cluster ion implanted in Ni films at extracted energy of 20 keV.
The schematic diagram of graphene synthesis on Ni/SiO2/Si substrate by cluster ion implantation.
Optical microscope (a) and SEM (b) images of graphene prepared by C4 cluster ion implantation in Ni films (objective: ×500).
(a) Raman spectra of graphene synthesized by C1-20 keV, C2-20 keV, C4-20 keV, and C1-10 keV ion implantation in Ni films; (b) deficiency degree of the four samples associated with the intensity ratio of various IG/ID.
AFM images of graphene synthesized by cluster ion implantation with (a) C1-20 keV and (b) C2-20 keV in Ni films. The root mean square (RMS) roughness of the samples is 0.332 nm and 0.308 nm, respectively.
Raman scattering peak positions and intensity ratios of I2D/IG and IG/ID of graphene samples prepared by cluster ion implantation.
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