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(a) The layer structure schematic and (b) simulated band diagram and electron density of the 5 nm GaN channel device. The UID in the AlN inter layer is 1 × 1018 cm−3, the doping in the AlGaN graded layer is 4.5 × 1018 cm−3.
Measured room temperature Hall mobility and 2-DEG density as a function of GaN channel thickness.
Measured Hall mobility as a function of temperature for the 12 nm, 8 nm, and 5 nm channels. The inset shows the measured Hall mobility for the 3.5 nm channel device.
Calculated and measured mobilities for the 12 nm, 8 nm, and 5 nm channel device. The dislocation density is assumed to be 1 × 1010 cm−2 with a filling factor f = 0.5, the trapped charge in the SiNx is assumed to be 1 × 1013 cm−2, the optical phonon energy for GaN is 92 meV and the deformation potential for acoustic phonons is 9.1 eV. For IR scattering, Δ = 0.48 nm and Λ = 3.0 nm are used for all the samples. The roughness paramaters of the top and bottom interfaces are assumed to be same and uncorrelated. The Favg for 12 nm, 8 nm, 5 nm, and 3.5 nm samples are 1.25 MV/cm, 1.67 MV/cm, 2.0 MV/cm, and 2.34 MV/cm, respectively.
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