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X-ray θ-2θ diffraction patterns andthe pole figure plots at the 2θ angle corresponding to SrBi4Ti4O15 119 for about 160-nm thick films prepared on (a) (100) c SrRuO3//(100)SrTiO3, (b) (110) c SrRuO3//(110)SrTiO3, (c) (111) c SrRuO3//(111) SrTiO3, and (d) (101) c RuO2//(102)Al2O3 substrates.
Schematic drawings of (a) (001)-, (b) (1110)-, (c) (105)/(015)-, and (d) (100)/(010)-oriented epitaxial SrBi4Ti4O15 films. These orientations correspond to c-axis tilting of 0°, 45°, 55°, and 90° from the surface normal direction, respectively.
(a) Relative dielectric constant measured at room temperature and (b) the inverse of the total capacitance as a function of total film thickness for epitaxial SrBi4Ti4O15 films with various orientations.
(a) Relative dielectric constant for about 160 nm-thick SrBi4Ti4O15 films and the film thickness where the relative dielectric constant begins to drop. (b) Inverse capacitance estimated at 0 nm as a function of tilting angle of the c-axis from the substrate surface normal.
Leakage current density at 150 kV/cm as a function of SrBi4Ti4O15 film thickness for the same films shown in Fig. 3.
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