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Analyses of hetero-interface trapping properties in AlGaN/GaN high electron mobility transistor heterostructures grown on silicon with thick buffer layers
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10.1063/1.4733359
/content/aip/journal/apl/101/1/10.1063/1.4733359
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/1/10.1063/1.4733359
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic representation of AlGaN/GaN HEMT device grown with increasing buffer layers thickness.

Image of FIG. 2.
FIG. 2.

Plot of calculated edge dislocation densites from XRC results and measured carrier moblities versus total epilayer thickness for AlGaN/GaN HEMT heterostructures grown with increasing buffer layers thickness.

Image of FIG. 3.
FIG. 3.

Normalized C-V curves of AlGaN/GaN HEMT heterostructures grown with increasing buffer layers thickness.

Image of FIG. 4.
FIG. 4.

Parallel conductance as a funciton of radial frequency at selected gate voltages near depletion region for AlGaN/GaN HEMT heterostructures with increasing buffer layers thickness. Solid lines represent the fitting curves of experimental Gp values.

Image of FIG. 5.
FIG. 5.

Interface trap time constants as a funciton of gate voltages in the vicinity of depletion region for AlGaN/GaN HEMT heterostructures grown with increasing buffer layers thickness.

Image of FIG. 6.
FIG. 6.

A comparision chart of hetero-interface state density (Dit-min ) for AlGaN/GaN HEMT heterostructures from conductance analyses versus total epilayer thickness. The AlGaN/GaN HEMT heterostructures in this work were all grown using thick AlN/GaN multilayers. The solid line represents the exponential fitting for Dit -min versus total epilayer thickness.

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/content/aip/journal/apl/101/1/10.1063/1.4733359
2012-07-06
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analyses of hetero-interface trapping properties in AlGaN/GaN high electron mobility transistor heterostructures grown on silicon with thick buffer layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/1/10.1063/1.4733359
10.1063/1.4733359
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