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Analyses of hetero-interface trapping properties in AlGaN/GaN high electron mobility transistor heterostructures grown on silicon with thick buffer layers
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10.1063/1.4733359
/content/aip/journal/apl/101/1/10.1063/1.4733359
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/1/10.1063/1.4733359
/content/aip/journal/apl/101/1/10.1063/1.4733359
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/content/aip/journal/apl/101/1/10.1063/1.4733359
2012-07-06
2014-09-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analyses of hetero-interface trapping properties in AlGaN/GaN high electron mobility transistor heterostructures grown on silicon with thick buffer layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/1/10.1063/1.4733359
10.1063/1.4733359
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