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Matrix role in Ge nanoclusters embedded in Si3N4 or SiO2
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Image of FIG. 1.
FIG. 1.

Cross sectional high angle annular dark-field STEM images of the Ge nanoclusters embedded in (a) Si3N4 or in (b) SiO2 matrices, obtained after Ge ions implantation (100 keV, 7.3 × 1016 cm−2) and annealing at 850 °C, 1 h. Larger Ge nanoclusters are observed in the SiO2 matrix. Respective diffraction images are shown as insets.

Image of FIG. 2.
FIG. 2.

Raman spectroscopy performed on the (a) Si3N4 or (b) SiO2 matrices. Lines plus symbols refer to implanted (100 keV, 7.3 × 1016 cm−2) and 850 °C annealed samples, while dashed lines refer to the respective not-implanted matrix. For comparison Raman spectroscopy performed on crystalline (c-Ge) or amorphous (α-Ge) Ge samples (continuous lines) are also reported. (c) Rutherford backscattering spectrometry performed on Ge implanted (continuous line) and annealed (triangles) Si3N4. Top and right axes have been calculated after a proper calibration for depth and Ge fluence.

Image of FIG. 3.
FIG. 3.

(a) Atomic absorption cross section (σ) spectra for Ge nanoclusters embedded in Si3N4 (700 °C annealing after 100 keV Ge implant: 2.9, 7.3, or 9.6 × 1016 Ge/cm2, diamonds, triangles, or squares, respectively). σ for annealing at 850 °C (closed triangles) or for SiO2 matrix (open circles) are also reported. (b) Tauc plot for Ge NCs in Si3N4 (triangles) or in SiO2 (circles) and corresponding linear fit (defects induced absorption, below the arrow, causes deviation from the fit). The band alignment scheme for Ge NCs in SiO2 or in Si3N4 is drawn, with relative electron affinity (χ) and bandgap (EG).31,32


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Matrix role in Ge nanoclusters embedded in Si3N4 or SiO2