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On-chip fabrication of ultrasensitive NO2 sensors based on silicon nanowires
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Sketch of the interdigitated structure used to realize the sensor and the designed Si NW sensor. (b) SEM images of the finite chemoresistive sensor and (c) Si NW network detail for the interdigitated structure with L = 6 μm.

Image of FIG. 2.
FIG. 2.

Bright-field high resolution TEM image taken close to a NW tip.

Image of FIG. 3.
FIG. 3.

SEM image of self-welding NW-NW junctions present in the Si NW network.

Image of FIG. 4.
FIG. 4.

SEM image of the a-Si layer formed within the NW network during the NW growth.

Image of FIG. 5.
FIG. 5.

Current-voltage curves of as-fabricated gas sensors with three interdigitated fingers for each side of the device at different fingers gap values: L = 3 μm (dashed line), 6 μm (dashed-dotted line), 11 μm (dotted line), 21 μm (solid line), measured under humidified nitrogen (50% RH).

Image of FIG. 6.
FIG. 6.

(a) Response curve of a typical sensor with fingers gap value of L = 21 μm. The sensor response is the current change due to NO2 concentration variation at a bias voltage of 1 V. The inset shows the response and recovery behaviors of the device at 20 and 10 ppb. (b) Normalized current variation, defined as S = 100ΔI/I0 = 100(I-I0)/I0, as function of NO2 concentration at selected response time of 3 min. I and I0 are the electrical current in NO2/humid nitrogen mix and only humid nitrogen, respectively.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: On-chip fabrication of ultrasensitive NO2 sensors based on silicon nanowires