Full text loading...
Normalised M-H hysteresis loops for as-deposited (solid line), 500 °C annealed (dashed line), and 600 °C annealed (dashed and dotted line) Co2FeSi thin films.
(a) XRD 2θ-ω out of plane scans for as-deposited and annealed samples. (b) XRD φ (111) plane scans for as deposited and annealed samples.
(a) Unfiltered HAADF STEM cross section image of the film structure for the sample annealed at 600 °C. (b) High resolution HAADF STEM image of the film showing the atomic structure. Insets show in-plane and out-of-plane intensity profiles allowing atomic identification.
(a) Weak-beam dark-field image of MgO/Co2FeSi interface showing. (b) Stress map of HAADF STEM image of the same region highlights dislocation cores at the interface.
Comparison of physical grain size (D XRD) and defect spacing (D Defect) with magnetic activation diameter (D act).
Article metrics loading...