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Schematics of the fabrication processes of the SiMG-SC. (a) Periodic PR strips were patterned with photolithography onto the p-Si substrate. (b) SiNWs were grown by MaCE in the trenches where no PR strips were covered. (c) SiNWs were thermally oxidized and removed by HF. (d) A layer of n-Si was formed along the surfaces of the SiMGs via SOD diffusion to construct the VMJ SC. (e) Next, the Ag layer was obliquely evaporated on the sidewalls and tops of the SiMGs by E-beam evaporator. (f) Finally, the undesired top Ag layer was peeled off with tape.
(a) A top-view SEM image of the morphological observations is shown for the SiNWs that were fabricated by the MaCE method in the trenches. The widths of the trenches and the SiMGs are 5 μm and 80 μm, respectively. (b) A cross-sectional-viewed image of (a). The length of the SiNWs is approximately 10 μm. (c) Two 150-nm-thick Ag layers were evaporated on the vertical sidewalls after we removed the SiNWs in the trenches. (d) A cross-sectional-viewed image of (c) The Ag layers can be observed on the sidewalls but top and bottom of the SiMGs.
Reflectance measured by UV/NIR spectrum photometer in wavelength ranging from 300 to 1100 nm. The average reflectance of the SSP Si, SSP control SC, SiMGs, and SiMG-SC are 37.9%, 48.7%, 33.3%, and 34.9%, respectively.
(a) The PV properties compared between the control SC and the SiMG-SC measured under the AM 1.5 G illumination (1000 W/m2). Inset is a photograph of the control SC evaporated with the planar electrode (right one) and the SiMG-SC evaporated with the VSE (left one). (b) The EQE measurements collected for the SiMG-SC and the control SC that ranging from 400–1100 nm.
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