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ETO thin films as imaged by (a) cross-section TEM and (b) HRTEM. The inset in (a) shows a corresponded selected-area diffraction image.
The open squares represent peak fittings on these graphs, which show the Eu 4d core-level photoemission spectra of as-deposited and annealed ETO thin films.
This graph shows the typical temperature dependence of J-E characteristics of annealed ETO thin films in temperatures that range from 50 to 300 K. The dotted line shows the measurement limit. The inset shows a comparison of leakage current density between the as-deposited and the annealed ETO films at room temperature.
(a) This graph shows ln(J/T 2) vs. E 1/2 characteristics of the annealed ETO films at negative bias. Listed on the graph are the calculated optical dielectric constant (εi ) and optical refractive index (n). (b) This graph shows the ln(J/E 2) and (1/E) characteristics of the annealed ETO films at positive bias from 200 to 300 K. The onset electric field of the FN tunneling (Et ) decreases with increasing temperature. (c) This graph shows log(J) vs. log(E) characteristics of the annealed ETO films at negative bias from 50 to 150 K.
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