banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Tunable aluminium-gated single electron transistor on a doped silicon-on-insulator etched nanowire
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

Device structure and characterization. (a) Schematic cross section of the device indicating the accumulation of a 2DEG at the interface and the local depletion by the barrier gates. (b) Scanning electron microscopy top-view of the device before the top gate is deposited. (c) Turn-on characteristics of the device at 300 K and 290 mK when a positive voltage is applied to all the three surface gates. . (d) Data from a different device at 4.2 K. Drain barrier gate presents an electrical discontinuity. Dual-side gating (DB1 and DB2 simultaneously biased) allows flexible control of the tunnel barrier.

Image of FIG. 2.
FIG. 2.

SET characterization at 290 mK. (a) Device conductance as a function of the barrier gate voltages for and . (b) Coulomb blockade diamonds as a function of for and . Differential conductance measured using a lock-in excitation voltage of .

Image of FIG. 3.
FIG. 3.

Device tunability. (a) Stability diagram for a large range of top gate voltages showing periodic regular Coulomb diamonds. Lock-in AC excitation of . and . (b) Total capacitance of the SET island as a function of . Periodic CB oscillations for different barrier gates biasing conditions for : (c) , (d) , (e) .

Image of FIG. 4.
FIG. 4.

Dopant signatures. (a) Source barrier voltage differential conductance at low . Two clear transition a, b are observable in the subthreshold regime as well as irregular resonances c at larger . (b) Source barrier stability diagram acquired with a lock-in AC excitation voltage of . The charging energy of the system is 20 meV.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tunable aluminium-gated single electron transistor on a doped silicon-on-insulator etched nanowire