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C60-based hot-electron magnetic tunnel transistor
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2012-09-04
2014-07-31

Abstract

A C60-based magnetic tunnel transistor is presented. The device is based on the collection of spin-filtered hot-electrons at a metal/C60 interface, and it allows an accurate measurement of the energy level alignment at such interface. A 89% change in the collected current under the application of a magnetic field demonstrates that these devices can be used as sensitive magnetic field sensors compatible with soft electronics.

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Scitation: C60-based hot-electron magnetic tunnel transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/10/10.1063/1.4751030
10.1063/1.4751030
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