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Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location
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10.1063/1.4751040
/content/aip/journal/apl/101/10/10.1063/1.4751040
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/10/10.1063/1.4751040

Figures

Image of FIG. 1.
FIG. 1.

HRTEM images of samples E (a) and F-1 (b), respectively. The GaN layer periodicity in the [0001] direction is 5.2 Å. Histograms represent the distribution of GaN quantum well widths obtained from image analysis. The solid black line denotes a continuous fit of the histogram in the inset of (b).

Image of FIG. 2.
FIG. 2.

Influence of the various many-body effects on the intersubband transition energy as a function of sheet charge density for a 2.6-nm QW with 2.6-nm barriers.

Image of FIG. 3.
FIG. 3.

(a) Absorbance spectra for samples A (blue), B (black), and C (red). Inset: PIA spectra for sample A. (b) Effect of Fermi-level pinning on the band structure and electron density distribution for two total charge densities. The superlattice surface is at 100-nm.

Image of FIG. 4.
FIG. 4.

Experimental (solid) and theoretical (dashed) absorbance spectra for samples E (black) and F-1 (red). Inset: Theoretical relationship between ISB linewidth and rms of the well-width distribution.

Tables

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Table I.

Summary of the results for intersubband absorption measurements (transition energy and FWHM of dominant absorption peaks) for the samples investigated in this study. The location of the δ-doping is given in parenthesis in ML from the beginning of growth of the quantum well. W, well bulk doping; B, barrier bulk doping; and SI, sample grown on semi-insulating substrate. PIA indicates result of photo-induced absorption measurements.

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/content/aip/journal/apl/101/10/10.1063/1.4751040
2012-09-05
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/10/10.1063/1.4751040
10.1063/1.4751040
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