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HRTEM images of samples E (a) and F-1 (b), respectively. The GaN layer periodicity in the  direction is 5.2 Å. Histograms represent the distribution of GaN quantum well widths obtained from image analysis. The solid black line denotes a continuous fit of the histogram in the inset of (b).
Influence of the various many-body effects on the intersubband transition energy as a function of sheet charge density for a 2.6-nm QW with 2.6-nm barriers.
(a) Absorbance spectra for samples A (blue), B (black), and C (red). Inset: PIA spectra for sample A. (b) Effect of Fermi-level pinning on the band structure and electron density distribution for two total charge densities. The superlattice surface is at 100-nm.
Experimental (solid) and theoretical (dashed) absorbance spectra for samples E (black) and F-1 (red). Inset: Theoretical relationship between ISB linewidth and rms of the well-width distribution.
Summary of the results for intersubband absorption measurements (transition energy and FWHM of dominant absorption peaks) for the samples investigated in this study. The location of the δ-doping is given in parenthesis in ML from the beginning of growth of the quantum well. W, well bulk doping; B, barrier bulk doping; and SI, sample grown on semi-insulating substrate. PIA indicates result of photo-induced absorption measurements.
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