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Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices
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10.1063/1.4751248
/content/aip/journal/apl/101/10/10.1063/1.4751248
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/10/10.1063/1.4751248
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-sectional TEM image and (b) I-V curves of the DL-RRAM plotted with the SL-RRAM for comparison. Inset shows the enlarged plot of the SL-RRAM in linear scale.

Image of FIG. 2.
FIG. 2.

(a) FN tunneling plot of HRS/LRS in positive/negative voltage regions. Temperature dependences of I-V curves for (b) HRS and (c) LRS.

Image of FIG. 3.
FIG. 3.

(a) Thermionic-emission plot for positive and negative voltage regions in both LRS and HRS. Inset shows PF-emission plot. (b) A logarithmic plot of the current dependence of S i at frequencies, 20 and 100 Hz in four conditions (HRS/LRS for positive/negative voltages). Inset shows the S i of HRS for positive voltage region.

Image of FIG. 4.
FIG. 4.

Schematic diagram of the proposed resistive-switching model. Each of the figures show (a) conduction band offset, (b) SET process, (c) LRS, (d) RESET process, and (e) HRS. (f) LRS and (g) HRS under the read bias.

Image of FIG. 5.
FIG. 5.

Retention characteristics under constant voltage stresses of the DL-RRAM. Inset shows the retention characteristic of the SL-RRAM.

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/content/aip/journal/apl/101/10/10.1063/1.4751248
2012-09-06
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/10/10.1063/1.4751248
10.1063/1.4751248
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