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Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial–regrowth of amorphous Si
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10.1063/1.4751254
/content/aip/journal/apl/101/10/10.1063/1.4751254
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/10/10.1063/1.4751254
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

1D F depth profile measured by SIMS (solid line) and APT (line plus triangles) after SPER at 650 °C for 273 s [Ref. 11]. The contribution of F-rich ions (SiF2 + and SiF3 +) to the F profile is plotted separately (line plus circles).

Image of FIG. 2.
FIG. 2.

3D reconstruction of the APT data: (a) the whole analyzed volume where Ni, Si and F atoms are represented by green, gray and blue dots; (b) a vertical slice of the 3D volume evidencing F accumulation at a/c interface and F clusters in the c-Si; (c) an horizontal slice of the 3D volume taken in correspondence of the box in Fig 2(b) showing Si (dots) and F (spheres) lateral distribution.

Image of FIG. 3.
FIG. 3.

F frequency distributions in blocks of 400 atoms compared with theoretical binomial distributions (dashed lines). (a) F (circles) and F + noise (triangles) frequency distribution in c-Si; (b) F frequency distribution in a-Si.

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/content/aip/journal/apl/101/10/10.1063/1.4751254
2012-09-06
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial–regrowth of amorphous Si
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/10/10.1063/1.4751254
10.1063/1.4751254
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