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Mg concentration in the films as function of Mg cell temperature. The data point labels indicate the sample. The dotted line indicates an Arrhenius type behavior expected for evaporation of Mg from an effusion cell.
Film resistivity , Hall electron concentration , and Hall mobility of Mg-doped films (S0–S4) as function of Mg-concentration and annealing conditions. The data points at an Mg-concentration of “” were taken with the UID reference sample S0. For samples with resistivity above only the resistivity could be reliably determined and no Hall data is given.
Hall electron concentration , and Hall mobility of selected films in the lower resistivity state (S0, S2, and S4) as function of temperature. Approximate effective donor activation energies are given.
Overview of the samples used in this study. The substrate “YSZ” denotes (001)-oriented :Y, “” denotes r-plane sapphire, and “” denotes the Mg-concentration. Parameters with potential impact on the samples oxygen stoichiometry: In-rich vs. O-rich growth conditions “In/O-rich” and temperature at which the oxygen supply was terminated during cooldown after growth “” are given.
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