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A model for photoexcitation and co-planar transport in a silicon-on-insulator hyperdoped Si/seed multilayer stack. Absorption of a photon with energy greater than the gap produces an electron hole pair. If the hole can escape the hyperdoped region, then it can traverse the sample in the seed layer. If the hole remains in the hyperdoped layer, then the lifetime is expected to be very short.
Sulfur concentration after implantation and laser melting determined by SIMS plotted against depth. The large increase near the surface is likely due to a surface oxide.
Potential energy for holes, computed by integration of Poisson’s equation assuming a donor level 100 meV below the conduction band edge, plotted as a function of depth. The sulfur buildup in the first 10 nm is neglected for this calculation.
Measured external quantum efficiency and simulated absorption in layers of the doped SOI sample. The squares are the quantum efficiency measured at individual wavelengths using lasers and light emitting diodes. The lowest solid curve (a) is the absorption in the bottom 50 nm of the silicon. The next curve (b) is the absorption in the bottom 100 nm. Curve (c) is the absorption in the bottom 150 nm. Curve (d) is the absorption in the bottom 200 nm. The uppermost solid curve (e) is the total absorption.
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