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Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers
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10.1063/1.4747805
/content/aip/journal/apl/101/11/10.1063/1.4747805
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4747805
/content/aip/journal/apl/101/11/10.1063/1.4747805
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/content/aip/journal/apl/101/11/10.1063/1.4747805
2012-09-10
2014-09-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4747805
10.1063/1.4747805
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