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Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment
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10.1063/1.4750235
/content/aip/journal/apl/101/11/10.1063/1.4750235
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4750235
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Figures

Image of FIG. 1.
FIG. 1.

(a) The forming current curves of the Sn:SiOx RRAM devices before and after SCCO2 treatment. (b) The black and red curves are the resistive switching characteristics of Sn:SiOx film before and after SCCO2 treatment, respectively. The current in high resistance state of post-treated Sn:SiOx film is reduced about 15 times from 9 μA to 0.6 μA.

Image of FIG. 2.
FIG. 2.

The current conduction curves in the Sn:SiOx film before and after SCCO2 treatment.

Image of FIG. 3.
FIG. 3.

The comparison of FTIR spectra of Sn:SiOx film before and after SCCO2 treatment. Both intensity of Sn-O and Si-O-Si bonds are increased in Sn:SiOx film after SCCO2 treatment.

Image of FIG. 4.
FIG. 4.

XPS spectra of Sn 3d5/2 and Si 2p core levels in Sn:SiOx film before and after SCCO2 treatment. The mole fraction of metallic tin and Si-OH bonds in Sn:SiOx film is reduced obviously but that of tin oxide and silicon oxide bonds is increased after SCCO2 treatment.

Image of FIG. 5.
FIG. 5.

The schematic diagram of passivation mechanism of SCCO2 treatment on Sn:SiOx film. The schematic structure for each step represents the situation of chemical bonding in the amorphous Sn:SiOx film before and after SCCO2 treatment.

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/content/aip/journal/apl/101/11/10.1063/1.4750235
2012-09-14
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4750235
10.1063/1.4750235
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